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The authors low-temperature data for variable-range-hopping conductivity in lightly doped, compensated n-InP gives: sigma = sigma 0 exp(-(T 0 /T) s ) with 0.21<s<0.28. This indicates that the corresponding Mott law for this conductivity mechanism, now established for two-dimensional structures is also an adequate description for three-dimensional systems.
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Benzaquen et al. (1985) studied this question.
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