Photoemission measurements of interface barrier energies for tunnel oxides on silicon

Internal photoemission measurements of the Si/SiO2 and Al/SiO2 barrier heights on oxides of tunneling thickness (43–56 Å) are compared with measurements on thick oxides (310 Å and greater) and the barrier heights are found to be the same. The results suggest that substantially thinner oxides, grown by the same method, can be characterized by the same barrier heights. Limits to the experimental technique posed by photovoltaic and displacement currents, and transport of hot carriers in the tunnel oxide are discussed.