We have studied the first stages of low-pressure oxidation of amorphous silicon using Auger electron spectroscopy. The application of the principal component analysis to the Si L2,3 core-valence-valence transition spectra, acquired during the oxidation, allows us for the interpretation of the oxidation kinetics of the a-Si. Using the target transformation method we have isolated the Auger spectra of the components present during the oxidation process. We observe an intermediate state in the Si-SiO2 interface formed during the oxidation. This state was attributed to a SiOx-type compound.
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Vidal et al. (1987) studied this question.
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