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The adsorption of oxygen on a Si (111) surface is accompanied by significant changes in the local electronic densities of states. These effects have been monitored as changes in the spectral distribution of emitted L2,3 VV Auger electrons from pure and oxygen-covered surfaces. Oxygen coverages varying from 0 to slightly below monolayer coverage (237L) have been employed. The present results are compared with data from recent sputter-profiling studies of the Si-SiO2 interface, showing similar behaviors in the two types of experiments.
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Morgen et al. (1979) studied this question.
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