Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
February 24, 2003Applied Physics Letters

In situ measurements of GaN nucleation layer decompostion

View Full Paper
Ask AI
Bookmark
Share

Authors

DKDaniel KoleskeUnited States Naval Research LaboratoryMCMichael E. ColtrinLockheed Martin (United States)AAAndrew A. AllermanSandia National Laboratories

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Koleske et al. (2003) studied this question.

synapsesocial.com/papers/6a8a4cb4ab4588dbccfba152https://doi.org/10.1063/1.1555264
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1The effect of thermal annealing on GaN nucleation layers deposited on (0001) sapphire by metalorganic chemical vapor deposition1994 · 79 citations
  2. 2GaN Growth Using GaN Buffer Layer1991 · 1,329 citations
  3. 3Effect of the Trimethylgallium Flow during Nucleation Layer Growth on the Properties of GaN Grown on Sapphire1996 · 44 citations
  4. 4The effect of H2 on morphology evolution during GaN metalorganic chemical vapor deposition1997 · 168 citations
  5. 5The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layer1996 · 65 citations