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May 15, 1994Journal of Applied Physics

The effect of thermal annealing on GaN nucleation layers deposited on (0001) sapphire by metalorganic chemical vapor deposition

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Authors

AWA. E. WickendenUnited States Naval Research LaboratoryDWD. K. WickendenUnited States Naval Research LaboratoryTKThomas J. KistenmacherJohns Hopkins University

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Wickenden et al. (1994) studied this question.

synapsesocial.com/papers/6a8a4c86b1e5d05ea8ec9acdhttps://doi.org/10.1063/1.355740
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