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November 30, 1992Applied Physics Letters

Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer

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TDTheeradetch DetchprohmGeorgia Institute of TechnologyKHK. HiramatsuKyushu UniversityHAHiroshi AmanoKyoto University

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Detchprohm et al. (1992) studied this question.

synapsesocial.com/papers/6a72cec74c8f6deb6ee4411bhttps://doi.org/10.1063/1.108110
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Also Consider

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  1. 1Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer1986 · 2,211 citations
  2. 2Heteroepitaxial Thermal Gradient Solution Growth of GaN1972 · 103 citations
  3. 3X‐Ray Diffraction Topography and Crystal Characterization of GaN Epitaxial Layers for Light‐Emitting Diodes1978 · 8 citations