Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
August 1, 1966Philosophical magazine

A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques

View Full Paper
Ask AI
Bookmark
Share

Authors

GBG. R. BookerSiemens (Germany)BJB.A. JoyceJohn Innes Centre

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Booker et al. (1966) studied this question.

synapsesocial.com/papers/6a8a545c83a8265f5d333ccchttps://doi.org/10.1080/14786436608219013
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Growth of epitaxial silicon layers by vacuum evaporation1965 · 26 citations
  2. 2Growth and Structure of Evaporated Silicon Layers1966 · 15 citations
  3. 3Method of preparing Si and Ge specimens for examination by transmission electron microscopy1962 · 105 citations
  4. 4Double positioning in silver and gold layers deposited on mica1962 · 66 citations
  5. 5A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques I.—experimental methods1966 · 58 citations