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A high hole concentration region of about 1×1021 cm-3 was generated without any post-annealing by the implantation of high doses of boron into silicon substrates. X-ray photoelectron spectroscopy (XPS) measurement and Fourier transform IR spectroscopy (FTIR) absorption spectra revealed that B12 icosahedra were created in as-implanted samples. A new model of the generation of holes is proposed in which B12 icosahedron acts as a double acceptor.
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Mizushima et al. (1994) studied this question.
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