What question did this study set out to answer?

Investigate the electrical properties, carrier distributions, and recrystallization dynamics of amorphous silicon layers implanted with BF2+ or co-implanted with Si+ and B+.

January 1, 1979Journal of Applied Physics

Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF+2 or Si++B+

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Authors

MTM. Y. TsaiIBM (United States)BSB. G. StreetmanUnited States Naval Research Laboratory

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Implication

Experimental study reveals full boron activation within recrystallized amorphous silicon layers at 550 °C, indicating that deeper amorphization prevents inactive interfacial dopant tails.

Key Points

Investigate the electrical properties, carrier distributions, and recrystallization dynamics of amorphous silicon layers implanted with BF2+ or co-implanted with Si+ and B+.
Generated amorphous silicon layers via ion implantation using either BF2+ or Si+ predamage implants combined with B+ implants.
Annealed samples at 550 °C to induce solid-phase recrystallization of the amorphized layers.
Analyzed carrier concentration profiles, resistivity, and carrier mobility using differential resistivity and Hall-effect measurements.
Boron dopants located inside the amorphized silicon layer underwent full electrical activation and regained mobility during annealing at 550 °C.
A portion of the boron distribution tail located in the damaged zone near the amorphous-crystalline interface remained electrically inactive in all BF2+ implants.
Complete activation across the entire boron profile was achieved exclusively by forming thicker amorphous layers using Si+ predamage implants.

Cite This Study

Tsai et al. (1979) studied this question.

synapsesocial.com/papers/6a8a54f1755d28965dfd6549 https://doi.org/10.1063/1.325688

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Implication

Experimental study reveals full boron activation within recrystallized amorphous silicon layers at 550 °C, indicating that deeper amorphization prevents inactive interfacial dopant tails.

Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF+2 or Si++B+

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Implication

Key Points

Cite This Study

Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF+2 or Si++B+

Discussion

Member takes

Implication

Key Points

Cite This Study

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