We report a new epitaxy procedure for growing extremely low defect density a -plane GaN films over r -plane sapphire. By combining selective area growth through a SiO 2 mask opening to produce high height to width aspect ratio a -plane GaN pillars and lateral epitaxy from their c -plane facets, we obtained fully coalesced a -plane GaN films. The excellent structural, optical and electrical characteristics of these selective area lateral epitaxy (SALE) deposited films make them ideal for high efficiency III-N electronic and optoelectronic devices.
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Chen et al. (2003) studied this question.
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