Answers are grounded in this paper and cite their sources.
Sheet-resistivity and Hall-effect measurements on ion-implanted silicon wafers have been performed. Carrier concentration profiles over the range of about 1019–1011 carriers/cm3 have been obtained for implants of 1014 ions/cm2 of 11B, 27Al, and 31P. Three regions, due to different penetration mechanisms, can be clearly distinguished: the amorphous range, the channeling range, and the supertail. Some indication for a kinetic substitution mechanism is seen in the channeling region.
No takes yet. Share an insight, caveat, or question.
Bader et al. (1970) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: