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October 15, 1980Applied Physics Letters

Deep-level traps in low-dose boron-implanted and low-temperature annealed silicon

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AMA. MitićFujitsu (Japan)TST. SatoToyota Central Research and Development Laboratories (Japan)HNH. NishiHitachi (Japan)

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Mitić et al. (1980) studied this question.

synapsesocial.com/papers/6a8a565551cd0cd12ac1428chttps://doi.org/10.1063/1.92060
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