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April 1, 1969International Journal of Electronics

The components of M.O.S. oxide charge and their dependence upon the oxidation process†

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Authors

SLS. J. LavertyUniversity of UlsterWRW.D. RyanJohn Innes Centre

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Laverty et al. (1969) studied this question.

synapsesocial.com/papers/6a8a565c1fb56efa37d4943bhttps://doi.org/10.1080/00207216908938167
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Also Consider

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  1. 1Evidence for Oxidation Growth at the Oxide-Silicon Interface from Controlled Etch Studies1964 · 85 citations
  2. 2Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized Silicon1967 · 716 citations
  3. 3Sodium distribution in thermal oxide on silicon by radiochemical and MOS analysis1966 · 129 citations
  4. 4Field Effect‐Capacitance Analysis of Surface States on Silicon1963 · 113 citations
  5. 5Semiconductor Surface Varactor1962 · 136 citations