The optical properties of extremely heavily doped n-GaAs are examined. Metastable electron concentrations up to 3.2×1019 cm−3 were produced by pulsed-laser annealing of Si-implanted GaAs. These very heavily doped layers give plasmon Raman shifts up to 1700 cm−1 and photoluminescence bandwidths of greater than 410 meV. The low-energy edge of the photoluminescence indicates a band-edge narrowing proportional to ∼n1/3 and equal to ∼200 meV at the highest electron concentration.
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Yao et al. (1990) studied this question.
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