Experiments on the Critical Exponent of Localization in Landau Subbands with the Landau Quantum Numbers 0 and 1 in Si-MOS Inversion Layers

Temperature ( T ) dependence of the mobility edge is examined by a model calculation which reproduces the experimental line shape of dσ x y /d N s (σ x y : Hall conductivity, N s : electron concentration) for (0↓-) and (1↑-) Landau subbands in Si-MOS inversion layers in the range of 0.35 K≦ T ≦1.5 K and in a magnetic field of 15 T. The result show that the critical behaviour of localization depends on the Landau quantum number.