Information on the self-energy of quantized current-carrying electron states in intrinsic GaAs has been obtained. The lifetime of Γ electron states in double-barrier resonant-tunnel structures depends on the well width, longitudinal optical phonon scattering, and transfer into the subsidiary X and L minima. Application of a magnetic field parallel to the direction of current injection totally quantizes the electronic system and enhances the lifetime of low-energy electron states.
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Levi et al. (1987) studied this question.
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