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The physical, electrical, and reliability characteristics of various Copper (Cu) barrier films, including SiC, SiCN, SiCO, SiCNO, and SiN, were investigated. The experimental results indicate that the SiN film is the best barrier film against Cu diffusion, adheres strongly to Cu film, and exhibits reliable electromigration (EM) performance, but its dielectric constant is too high. Nitrogen-doped or oxygen-doped silicon carbide films (SiCN or SiCO) have a lower dielectric constant, but at the cost of reduced reliability. SiCNO film that is doped with both nitrogen and oxygen exhibits more reliable EM and stress-migration with a comparable physical and electrical performance to that of the SiN film.
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Cheng et al. (2011) studied this question.
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