The planar dechannelling cross-sections of MeV ions at dislocations were calculated and the results were summarized in graphs, from which the dechannelling cross-section at a dislocation in an arbitrary crystal can be derived. The observed planar dechannelling cross-sections at edge dislocations in Si crystals implanted with phosphorus ions were compared with those derived from the calculated graphs, and the agreement between them was found to be satisfactory.
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Kimura et al. (1982) studied this question.
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