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Results of dielectric studies of electron-beam deposited holmium oxide thin films, examined in metal/insulator/metal (MIM) structures, are reported. The frequency domain characteristics of the capacitance, dielectric loss and complex impedance have been estimated from the time domain measurements of the charging and discharging currents. The influence of the voltage on the dielectric characteristics at 430 K has been tested. Experimental results clearly show that the dielectric response in the frequency range from 100 kHz to 20 Hz comes from the insulating film of Ho/sub 2/O/sub 3/ as well as from metal-insulator interfaces. The capacitance and resistance of Ho/sub 2/O/sub 3/ film and Al-Ho/sub 2/O/sub 3/ regions have been determined.
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Wiktorczyk et al. (2001) studied this question.
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