Semiempirical model of carrier mobility in silicon carbide for analyzing its dependence on temperature and doping level

Experimental data on electron and hole mobility in three silicon carbide polytypes, 4 H -SiC, 6 H -SiC, and 3 C -SiC, are analyzed. A semiempirical model is proposed for describing the dependence of the majority carrier mobility on temperature and doping level. The model describes well the accumulated body of experimental data and can be applied to model characteristics of multilayer silicon carbide structures.