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October 1, 1990IEEE Electron Device Letters

A ferroelectric DRAM cell for high-density NVRAMs

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Authors

RMR. MoazzamiMotorola (United States)CHChen HuState Grid Corporation of China (China)WSW.H. ShepherdRMIT University

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Moazzami et al. (1990) studied this question.

synapsesocial.com/papers/6a8a85291c70e695d8436bb5https://doi.org/10.1109/55.62994
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