Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
October 8, 2010IEEE Electron Device Letters

Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With SiNₗ and SiO₂ Gate Dielectrics

View Full Paper
Ask AI
Bookmark
Share

Authors

KJKwang Hwan JiLG (South Korea)YMYeon‐Gon MoSamsung (South Korea)JJJong Han JeongRAND Corporation

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Ji et al. (2010) studied this question.

synapsesocial.com/papers/6a8a90495c2d46d9b8431e60https://doi.org/10.1109/led.2010.2073439
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors2008 · 846 citations
  2. 2Stable indium oxide thin-film transistors with fast threshold voltage recovery2007 · 115 citations
  3. 3Comprehensive Study on the Transport Mechanism of Amorphous Indium-Gallium-Zinc Oxide Transistors2008 · 54 citations
  4. 4Over-Erase Phenomenon in SONOS-Type Flash Memory and its Minimization Using a Hafnium Oxide Charge Storage Layer2004 · 123 citations
  5. 5High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper2007 · 456 citations