Metal-insulator-metal (MIM) capacitors with (HfO2)/sub 1-x/(Al2O3)/sub x/ high-/spl kappa/ dielectric films were investigated for the first time. The results show that both the capacitance density and voltage/temperature coefficients of capacitance (VCC/TCC) values decrease with increasing Al2O3mole fraction. It was demonstrated that the (HfO2)/sub 1-x/(Al2O3)/sub x/ MIM capacitor with an Al2O3mole fraction of 0.14 is optimized. It provides a high capacitance density (3.5 fF/μm2) and low VCC values (/spl sim/140 ppm/V2) at the same time. In addition, small frequency dependence, low loss tangent, and low leakage current are obtained. Also, no electrical degradation was observed for (HfO2)/sub 1-x/(Al2O3)/sub x/ MIM capacitors after N2annealing at 400/spl deg/C. These results show that the (HfO2)/sub 0.86/(Al2O3)/sub 0.14/ MIM capacitor is very suitable for capacitor applications within the thermal budget of the back end of line process.
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Hu et al. (2003) studied this question.
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