A physically-based technique for measuring the threshold voltage of small geometry MOSFETs is presented. The new method, called the quasi-constant current (QCC) method, is based on the drain current equation in the subthreshold region. It defines the threshold voltage as the gate voltage required for surface band-bending of 2ϕF. Compared with some other commonly used methods, this technique has the advantages of better fitting accuracy in the subthreshold region, of extracting the threshold voltage, VTH, with a unique value based on a physical definition of the surface band-bending, and of being suitable for MOS devices over a wide range of voltage biases, device dimensions, and temperatures.
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Yan et al. (1991) studied this question.