Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
June 19, 1980Electronics Letters

Ballistic electron motion in GaAs at room temperature

View Full Paper
Ask AI
Bookmark
Share

Authors

LEL.F. EastmanCornell UniversityRSR. A. StallEmcore (United States)DWD. W. WoodardCornell University

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Eastman et al. (1980) studied this question.

synapsesocial.com/papers/6a8a92a6238a34ecf47233a8https://doi.org/10.1049/el:19800366
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Ballistic transport in semiconductor at low temperatures for low-power high-speed logic1979 · 297 citations
  2. 2Femtojoule Josephson tunneling logic gates1974 · 42 citations
  3. 3Two-dimensional particle models in semiconductor-device analysis1974 · 94 citations
  4. 4Low-temperature f.e.t. for low-power high-speed logic1977 · 23 citations
  5. 5High-speed integrated logic with GaAs MESFET's1974 · 140 citations