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December 1, 1989Japanese Journal of Applied Physics

Measuring the Temperature of a Quartz Substrate during and after the Pulsed Laser-Induced Crystallization of a-Si:H

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Authors

TSToshiyuki SameshimaTokyo Electron (Japan)MHMasaki HaraUniversity of ToyamaSUS. UsuiSony (Taiwan)

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Sameshima et al. (1989) studied this question.

synapsesocial.com/papers/6a8a92c0176d2ac34cfbe975https://doi.org/10.1143/jjap.28.l2131
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