Inverse modeling of impact ionization rate through comparison of Monte Carlo simulation of Si metal-oxide-semiconductor device characteristics and experimental results

Direct comparison of the characteristics of a Si metal-oxide-semiconductor device provided by Monte Carlo simulation and experimental results is rare. This paper appraises the degree of agreement between simulated and experimental results of drain current versus drain voltage (Id-Vd). It also derives the impact ionization rate formula inversely by comparing the simulated and experimental dependence of the substrate current (Isub) on the gate voltage (Vg). We found that (1) for Id-Vd characteristics, the agreement in the linear region was off, but overall agreement was fairly good, and (2) the simulated Isub-Vg characteristics were in fairly good agreement with the experimental characteristics when the modified Keldish formula Pii=P0[(E−1.12)/1.12]n with an n of 7 and P0 of 2.8×1011 s−1 was used as the formula for the impact ionization rate.