Modelling plasma‐induced hydrogen profiles in boron‐doped and near‐intrinsic silicon

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Reported depth profiles of hydrogen (deuterium) in silicon, created by exposure to plasma, were re‐analysed on the basis of modern knowledge of the properties of atomic and dimeric hydrogen species. In boron‐doped samples, the profiles allow to extract the equilibrium constant for the boron passivation reaction and the binding energy of the HB defect, 0.75 eV. In the near‐intrinsic samples the profiles shape suggests two independent in‐diffusion and pairing processes: one is by fast dimers, and the other – by neutral monomers that are reversibly trapped by some impurity, probably carbon.