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A pulsed Nd:yttrium aluminum garnet (YAG) laser, power density 4–10×107 W/cm2, was used to prepare thin films of Cd3As2 by evaporation onto room-temperature substrates. The net deposition rate was 105 Å/s. The film microstructure was composed of amorphous agglomerates, 600–2000 Å in size. The films obtained with power density 7–10×107 W/cm2 were stoichiometric and they had electron concentrations of 2.6–10×1018 cm−3 and electron mobilities of 210–520 cm2/Vs at 300 K.
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Dubowski et al. (1984) studied this question.
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