What question did this study set out to answer?

To evaluate the electronic properties and quantify the active charge carrier concentration in phosphorus-doped silicon nanocrystal and silicon dioxide superlattices.

March 16, 2015Applied Physics Letters

Electronic properties of phosphorus doped silicon nanocrystals embedded in SiO2

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Authors

SGSebastian GutschUniversity of Freiburg JLJan LaubeUniversity of Freiburg DHDaniel HillerTU Bergakademie Freiberg

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Implication

Experimental analysis reveals low doping efficiency in phosphorus-doped silicon nanocrystal superlattices, explaining weak dopant effects on electrical transport.

Key Points

To evaluate the electronic properties and quantify the active charge carrier concentration in phosphorus-doped silicon nanocrystal and silicon dioxide superlattices.
Encapsulated silicon nanocrystal and silicon dioxide multilayer structures between insulating boundary layers.
Regulated carrier mobility via controlled layer-to-layer separation and analyzed carrier concentrations using transient current measurements.
Observed saturation of the voltage-dependent ionized carrier density, verifying complete substitutional dopant ionization.
Determined a superlattice doping efficiency of 0.12% in the full ionization regime, explaining the negligible dopant effect on charge transport.

Cite This Study

Gutsch et al. (2015) studied this question.

synapsesocial.com/papers/6a8aa02c087922ff7fcbea0d https://doi.org/10.1063/1.4915307

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Implication

Experimental analysis reveals low doping efficiency in phosphorus-doped silicon nanocrystal superlattices, explaining weak dopant effects on electrical transport.

Electronic properties of phosphorus doped silicon nanocrystals embedded in SiO2

Discussion

Member takes

Implication

Key Points

Cite This Study

Electronic properties of phosphorus doped silicon nanocrystals embedded in SiO2

Discussion

Member takes

Implication

Key Points

Cite This Study

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