Measurements of free-to-bound luminescence and bound-exciton luminescence spectra have enabled the binding energies of C, Si, Ge, Zn and Cd acceptors in GaAs to be established accurately. They are respectively 26.y, 35.2, 41.2, 31.4 and 35.4 meV. Data on the ground state and the first s excited state show a smooth relationship which includes the theoretical data of Lipari and Baldereschi (1970).
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White et al. (1973) studied this question.
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