Time-of-flight measurement for electron velocity in p-AlGaAs/GaAs/AlGaAs at a high field

Time-of-flight measurements using a picosecond pulsed laser are made for a p-AlGaAs/GaAs/AlGaAs double heterostructure to successfully obtain the velocity-electric field relationship for photoexcited electrons at room temperature. In the high electric field region, velocity enhancements are observed, which have never been reported until now. Possible mechanisms, which attribute to the velocity enhancement, are also discussed.