Charge carrier drift velocities in semiconductor materials suitable for solid state detectors has been reviewed. Si, Ge, CdTe and GaAs are considered. New data for HgI2 recently obtained are also reported. The data cover a large range of temperatures (6-430 K) and electric fields up to 50 KV/cm. An anisotropy effect in the drift velocity obtained by applying the electric field parallel to different crystallographic axis is also discussed for the case of Si and Ge.
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Ottaviani et al. (1975) studied this question.
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