Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
January 1, 1967IEEE Transactions on Electron Devices

Measurement of high-field carrier drift velocities in silicon by a time-of-flight technique

View Full Paper
Ask AI
Bookmark
Share

Authors

CNC. B. NorrisSandia National Laboratories CaliforniaJGJ. F. GibbonsUniversity College Dublin

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Norris et al. (1967) studied this question.

synapsesocial.com/papers/6a6fbeda75498292b709215fhttps://doi.org/10.1109/t-ed.1967.15893
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Mobility of Holes and Electrons in High Electric Fields1953 · 357 citations
  2. 2High Field Mobility in Germanium with Impurity Scattering Dominant1953 · 40 citations
  3. 3The influence of interelectronic collisions on conduction and breakdown in covalent semi-conductors1957 · 125 citations
  4. 4Hot Electrons in Germanium and Ohm's Law1951 · 556 citations
  5. 5A theory of the electrical breakdown of solid dielectrics1934 · 1,425 citations