Radiation annealing of Si- and S-implanted GaAs using tungsten lamps was studied. In capless radiation annealing, electrical activations were 70–80%, which were 20–30% higher than that in conventional furnace annealing for a low dose below 2×1013 cm-2. Effects of encapsulation on electrical activation were also investigated. It was found that electrical activations of high dose samples were improved by encapsulating the surface with SiO2 film for Si-implanted samples and with Si3N4 film for S-implanted samples.
No takes yet. Share an insight, caveat, or question.
Ito et al. (1983) studied this question.
Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context: