A study of GaAs prepared by conventional Bridgman techniques and by liquid-encapsulated Czochralski methods reveals that only small amounts of boron are incorporated from the boric oxide encapsulant. When a pyrolytic boron nitride crucible is used, there is a 100-fold increase in the amount of incorporated boron, suggesting some decomposition of the boron nitride.
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Hopkins et al. (1980) studied this question.
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