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The production of SiC and Si3N4 films in silicon by : mplantation of 40 keV carbon and nitrogen ions has been studied by using electron-transmission microscopy and infrared spectra. Immediately after implantation at temperatures in the range of room to 500°C the amorphous layers were observed. Polycrystalline β-SiC was formed after 850°C annealing. The amorphous-polycrystal transformation occurs in the annealing temperature interval from 600°C to 850°C. At high-temperature bombardment in the range of 600°C-850°C, SiC layer structure was changed from polycrystal close to amorphous to single-crystal. The latter structure can also be formed by the high-temperature ( 600°C) implantation followed by high-temperature annealing. Polycrystal β-Si3N4 was formed after the 850°C nitrogen bombardment.
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Edelman et al. (1976) studied this question.
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