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Ion implantation of indium in silicon has been studied at 30 keV both in random and in channeling conditions. Implantations were performed at room temperature with doses ranging from 1×1012 to 1×1015 ions/cm2; surface carrier concentration versus anneal temperature curves were obtained and compared with the behavior of other group III elements. The anneal behavior of the above-mentioned implants after anneal at 700°C and subsequent tin implantation is also discussed.
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Bergamini et al. (1970) studied this question.
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