We have determined the strain dependence of the in-plane hole effective mass in pseudomorphic Inx Ga1−x As/Al0.15 Ga0.85As modulation-doped heterostructures by low-temperature Shubnikov–de Haas measurements. An effective mass equal to 0.18m0 is measured for x=0.2. The measured values are in good agreement with theoretical calculations.
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Jaffé et al. (1989) studied this question.
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