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March 21, 1988Applied Physics Letters

GaAs/(In,Ga)As, p-channel, multiple strained quantum well field-effect transistors with high transconductance and high peak saturated drain current

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Authors

TZT. E. ZipperianSandia National LaboratoriesLDL. R. DawsonON Semiconductor (United States)TDT. J. DrummondUniversity of Groningen

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Zipperian et al. (1988) studied this question.

synapsesocial.com/papers/6a8af7c7ae714cd733ca9749https://doi.org/10.1063/1.99246
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