Density of states in amorphous Si:H

The density of states in the pseudogap of doped and undoped glow‐discharge prepared amorphous silicon is determined from transport data. Thermopower and conductivity are combined to calculate the position of the Fermi level as a function of temperature and doping rate. An effective density of states model is constructed that can account for these data. The true density of states is then determined under the assumption of a simple model for the correlation energy. It is shown that this model can account in detail for the doping dependence of the spin densities of various spin resonance lines recently reported.