Spectral response of metal—amorphous silicon barriers and hole drift mobility

The spectral response of Schottky diodes made on sputtered hydrogenated amorphous silicon is investigated. Measurements are performed for different photon fluxes. From these experiments the hole drift mobility is deduced to μdh = 1.5 × 10−5 cm2 V−1 s−1. Under illumination the diode characteristic seems to be improved: both the ideality factor and the saturation current are found to be lower under light than in the dark.