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November 5, 1987Electronics Letters

High-speed GaInAsP/InP buried-heterostructure optical intensity modulator with semi-insulating InP burying layers

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Authors

HSH. SodaTokyo Institute of TechnologyKNKenta NakaiThe University of TokyoHIH. IshikawaNational Institute for Materials Science

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Soda et al. (1987) studied this question.

synapsesocial.com/papers/6a8ac7f5fe910689a2892684https://doi.org/10.1049/el:19870858
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