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Preliminary results for 1.55 μm InGaAsP double-heterostructure lasers with symmetrical InGaAsP confining layers are presented. The lowest broad-area threshold is 1.36 kA/cm2, which is 30% lower than the best value previously reported for 1.55 μm lasers. This improvement is believed to be related to the absence of terracing on InGaAsP confining layers.
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Westbrook et al. (1981) studied this question.
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