Based on experimental evidence models are tentatively suggested to identify deep-level defects in Gap related to the phosphorus vacancy Vp. Especially, the complex (ZnGa, Vp) is proposed to be a dominant nonradiative recombination centre on the n-side of non-perfectly diffused junctions. During operation of light-emitting diodes, a specific mode of degradation may occur due to the recombination-assisted generation of the phosphorus vacancy. Moreover, defect reactions are studied associated with Vp related deep-level defects in Gap.
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Krispin et al. (1984) studied this question.
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