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August 1, 1984IEEE Transactions on Electron Devices

A new open diffusion technique using evaporated Zn3P2and its application to a lateral p-n-p transistor

F. Schmitt Li Su D. Franke R. Kaumanns

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Abstract

This paper reports a new open diffusion technique with a thin vacuum-deposited Zn3P2layer covered by an Al2O3layer. The diffusion in

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Schmitt et al. (1984) studied this question.

synapsesocial.com/papers/6a8acaa58c20842028337156 https://doi.org/10.1109/t-ed.1984.21665

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