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May 1, 1980Applied Physics Letters

Determination of substitutional dopant and hole concentrations in Zn-diffused single-crystal InP

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Authors

RWR. Stanley WilliamsUniversity of California, RiversidePBP. A. BarnesAT&T (United States)LFL. C. FeldmanRutgers, The State University of New Jersey

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Williams et al. (1980) studied this question.

synapsesocial.com/papers/6a8acae4e76aab3312336ecchttps://doi.org/10.1063/1.91642
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Also Consider

Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Electrical measurements on homogeneous diffused p-type InP1977 · 26 citations
  2. 2Diffusion profiles of zinc in indium phosphide1975 · 120 citations
  3. 3Diffusion of Cd acceptors in InP and a diffusion theory for III-V semiconductors1979 · 47 citations