Determination of the lateral barrier height of inhomogeneous Au/n-type InP/In Schottky barrier diodes

We have identically prepared Au/n-InP/In Schottky barrier diodes (SBDs). The barrier height for the Au/n-InP/In SBDs from the current–voltage characteristics has varied from 0.557 eV to 0.615 eV, and the ideality factor n from 1.002 to 1.087. We have determined a lateral homogeneous barrier height value of approximately 0.597 eV for the Au/n-InP/In SBD from the experimental linear relationship between barrier heights and ideality factors. The barrier height value obtained from the reverse bias C −2 – V characteristics has varied from 0.512 eV to 0.572 eV and statistical analysis yields the mean Φ( C – V ) = 0.562 ± 0.004 eV. A doping density of about (2.90 ± 0.05) × 10 15 cm −3 has been determined from the reverse bias C −2 – V characteristics.