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July 1, 1986IEEE Transactions on Electron Devices

The use of charge pumping to characterize generation by interface traps

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Abstract

A small rectangular pulse technique for measuring charge-pumping current has been proposed as a method to characterize interface traps near midgap. It is shown theoretically and experimentally that the small rectangular pulse technique can be used to predict the surface generation current measured on a MOSFET or a gated diode. This new technique has the advantage that the measured current is at least 10 to 100 times larger than the surface generation current.

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Cite This Study

R. Wachnik (1986) studied this question.

synapsesocial.com/papers/6a8ae859a42d46e0ffcaa0a8 https://doi.org/10.1109/t-ed.1986.22612

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